PECVD Systems – PECVD SiCN

The plasma-enhanced chemical vapor deposition (PECVD) silicon carbonitride (SiCN) system is designed to support advanced semiconductor manufacturing, addressing critical film requirements for both back-end-of-line (BEOL) processing and advanced packaging. Leveraging ACM’s strengths in PECVD deposition, the system enables the deposition of high-quality SiCN films for BEOL, including copper oxidation reduction, copper diffusion barrier layers and etch stop layers.

As device scaling and integration complexity increase, tighter control of particles, plasma stability and interface layers becomes essential. The PECVD SiCN system utilizes a proprietary three-station rotating deposition architecture to improve control over film formation, gas flow and wafer-level uniformity. This design supports the delivery of films with strong adhesion, high bonding energy, dense film characteristics and low defect levels to meet the demanding requirements of BEOL and advanced packaging processes.

Features and Benefits

• Proprietary three-station rotating deposition architecture improves film uniformity and process control; each station deposits one-third of the total film for enhanced control of interface formation and gas flow
• “One Station, One RF” technology provides independent plasma control at each station through dedicated radio frequency (RF) systems, improving process stability and consistency
• Configurable system with four load ports and three process chambers for efficient wafer handling and flexible operation
• Designed for 300mm wafer processing
• Supports process temperatures up to 400°C